features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt not f or n ew d esi gns rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. inp hbt ldmos rf mems sgc-6389z 50mhz to 4000mhz active bias silicon germanium cascadable gain block rfmd?s sgc-6389z is a high performance sige hbt mmic amplifier utiliz- ing a darlington configuration with a patented active-bias network. the active bias network provides stable current over temperature and process beta variations. designed to run dire ctly from a 5v supply, the sgc-6389z does not require a dropping resistor as compared to traditional darlington amplifiers. the sgc-6389z product is designed for high linearity 5v gain block applications that require small size and minimal external compo- nents. it is internally matched to 50 ? . gain and return loss v d = 5v, i d = 84ma -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) gain (db) s 22 s 21 s 11 bias tee data, z s = z l = 50 ? , t l = 25c ? single fixed 5v supply ? no dropping resistor re quired ? patented self bias circuitry ? gain = 12.8dbm at 1950mhz ? p1db = 18.6dbm at 1 950mhz ? oip3 = 34.5dbm at 1950mhz ? robust 1000v esd, class 1c hbm applications ? pa driver amplifier ? cellular, pcs, gsm, umts, wcd ma ? if amplifier ? wireless data, satellite ds20160226 not for new designs ? package: sot-89 sgc-6389z 50mhz to 4000mhz active bias sili- con germa- nium cascadable gain block parameter specification unit condition min. typ. max. small signal gain 14.8 16.3 17.8 db 850mhz 11.3 12.8 14.3 db 1950mhz* 11.9 db 2400mhz output power at 1db compression 19.5 dbm 850mhz 17.6 18.6 dbm 1950mhz* 18.2 dbm 2400mhz output third order intercept point 36.0 dbm 850mhz 32.5 34.5 dbm 1950mhz* 33.5 dbm 2400mhz input return loss 9.0 12.5 db 1950mhz* output return loss 8.5 11.5 db 1950mhz* noise figure 3.7 4.5 db 1950mhz thermal resistance 60 c/w junction - lead device operating voltage 5.0 v device operating current 74.0 84.0 94.0 ma test conditions: v d = 5v, i d = 84ma typ., oip3 tone spacing = 1mhz, p out per tone = 0dbm, bias tee data, z s = z l = 50 ? , *test results at 1950mhz measured with application circuit
2 of 6 ds20160226 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. not f or n ew d esi gns sgc-6389z typical rf performance at key operating frequencies (bias tee data) absolute maximum ratings parameter rating unit device current (i ce ) 120 ma device voltage (v ce )6 . 5 v rf input power* (see note) 8 dbm junction temp (t j )+ 1 5 0 c operating temp range (t l ) -40 to +85 c storage temp +150 c esd rating - human body model (hbm) class 1c moisture sensitivity level msl 2 *note: load condition z l = 50 ? . operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l )/r th , j - l and t l = t lead parameter unit 50 mhz 100 mhz 500 mhz 850 mhz 1950 mhz* 2400 mhz 3500 mhz small signal gain (g) db 18.4 18.0 17.6 16.3 12.8 11.9 9.4 output third order intercept point (oip 3 ) dbm 36.0 36.5 35.5 36.0 34.5 33.5 30.5 output power at 1db compression (p 1db ) dbm 20.7 20.4 19.9 19.5 18.6 18.2 16.5 input return loss (irl) db 17.5 23.0 21.5 15.5 12.5 12.0 10.5 output return loss (orl) db 15.5 21.0 22.0 15.5 11.5 12.0 10.0 reverse isolation (s 12 ) db 20.5 20.0 21.0 21.5 19.5 19.0 18.5 noise figure (nf) db 2.8 2.6 2.9 3.3 3.7 4.0 4.7 test conditions: v d = 5v i d = 84ma oip3 tone spacing = 1mhz, p out per tone = 0dbm t l = 25c z s = z l = 50 ? *test results at 1950mhz measured with application circuit typical performance with bias tees, v d = 5v, i d = 84ma caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder. oip 3 versus frequency (0dbm/tone, 1mhz spacing) 28.0 30.0 32.0 34.0 36.0 38.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) oip 3 (dbm) 25c -40c 85c p 1db versus frequency 13.0 15.0 17.0 19.0 21.0 23.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) p 1db (dbm) 25c -40c 85c
3 of 6 not f or n ew d esi gns ds20160226 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sgc-6389z typical performance with bias tees, v d = 5v, i d = 84ma noise figure vs. frequency 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) nf (db) 25c 85c current versus voltage 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 0.00.51.01.52.02.53.03.54.04.55.05.5 v d (v) i d (ma) 25c -40c 85c s 11 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s 11 (db) 25c -40c 85c s 21 versus frequency 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0.00.51.01.52.02.53.03.54.0 frequency (ghz) gain (db) 25c -40c 85c s 22 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s 22 (db) 25c -40c 85c s12 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s 12 (db) 25c -40c 85c
4 of 6 ds20160226 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. not f or n ew d esi gns sgc-6389z sot-89 pcb pad layout sot-89 nominal package dimensions dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. pin function description 1rf in rf input pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of operation. 2, 4 gnd connection to ground. use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum rf performance. 3rf out/dc bias rf output and bias pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of opera- tion. sot -89 pcb pad layout dimensions in inches [millimeters] notes: 1. provide a large ground pad area under device pins 2 and 4 with several plated- through holes placed as shown. 2. 1-2 ounce finished copper thickness is recommended. 3. rf i/o lines are 50 rf in rf out
5 of 6 not f or n ew d esi gns ds20160226 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sgc-6389z application schematic evaluation board layout application circuit element values reference designator 100-1000mhz 1000-2200mhz c1 1000pf 6.8pf c2 100pf 6.8pf c3 100pf 6.8pf l1 100nh 39nh 1 rf in c1 1uf vs rf out 4 sgc-6389z 2 3 c2 c3 1000pf l1
6 of 6 ds20160226 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. not f or n ew d esi gns sgc-6389z part identification alternate marking ?SGC6389Z? on line one with trace code on line two. 1 2 3 part number description reel size devices / reel sgc-6389z lead free, rohs compliant 13" 3000 sgc-6389z-evb1 100-1000 mhz evaluation board n/a n/a sgc-6389z-evb2 1000-2200 mhz evaluation board n/a n/a part / evaluation board ordering information
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